SEMICONDUCTOR INDUSTRY

UPDATE

May 2019

McIlvaine Company

Table of Contents

 

TowerJazz Signing Agreement with Panasonic Semiconductor Solutions

 Investment Announced By Seagate Technology

 Cree to Expand Silicon Carbide Capacity

 Hi-Tech New York Facility Gets New Resident

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TowerJazz Signing Agreement with Panasonic Semiconductor Solutions

Panasonic will continue to utilize TPSCo three manufacturing facilities in Japan; TowerJazz to further ramp its leading technology solutions and foundry business.

TowerJazz, the global specialty foundry leader, and TowerJazz Panasonic Semiconductor Company (TPSCo), announced they have signed a three-year agreement, extending its previous business partnership with Panasonic Semiconductor Solutions (PSCS) through 2022. Under the agreement, PSCS will continue to utilize TPSCo three manufacturing facilities in Japan for its semiconductor business. Wafer loading level from PSCS to TPSCo fabs is expected to remain similar, with a new pricing structure, resulting in revenue reductions of approximately 20 million USD per quarter, with revenue and margins targeted to be compensated through presently implemented efficiencies and cost reduction activities, as well as third party revenue growth, including the present strong 300mm utilization ramp.

Russell Ellwanger, TowerJazz CEO and TPSCo Chairman commented, “The TPSCo partnership has brought together two leaders - Panasonic, an acknowledged analog components and systems leader, and TowerJazz, a recognized analog foundry leader- having created a company that serves and continues to grow the analog foundry space as no other existing single foundry can. During the past five years, we have continued to grow in respect for the technical capability and appreciation for the business acumen and can-do attitude of our Panasonic partner. Our TPSCo employee base has strong technical expertise and pristine operational execution, with over 180 foundry customers have been introduced into TPSCo, which is presently realizing a strong ramp in 300mm state of the art RF, power management and CMOS imaging flows. This has been and continues to be a winning equation for all involved - TowerJazz, PSCS, TPSCo and our very important customers.”

Through TPSCo, TowerJazz offers its customers advanced 300mm analog technology manufacturing platforms such as state-of-the-art 65nm CMOS image sensor solutions, RF SOI 65nm, and 65nm Bipolar-CMOS-DMOS (BCD) power management platform.

TowerJazz to maintain its 51% holding of TPSCo shares, with PSCS as a 49% shareholder.

About TowerJazzTower Semiconductor Ltd. (NASDAQ: TSEM, TASE: TSEM) and its subsidiaries operate collectively under the brand name TowerJazz, the global specialty foundry leader. TowerJazz manufactures next-generation integrated circuits (ICs) in growing markets such as consumer, industrial, automotive, medical and aerospace and defense. TowerJazz’s advanced technology is comprised of a broad range of customizable process platforms such as: SiGe, BiCMOS, mixed-signal/CMOS, RF CMOS, CMOS image sensor, integrated power management (BCD and 700V), and MEMS. TowerJazz also provides world-class design enablement for a quick and accurate design cycle as well as Transfer Optimization and development Process Services (TOPS) to IDMs and fabless companies that need to expand capacity. To provide multi-fab sourcing and extended capacity for its customers, TowerJazz operates two manufacturing facilities in Israel (150mm and 200mm), two in the U.S. (200mm) and three facilities in Japan (two 200mm and one 300mm). For more information, please visit www.towerjazz.com.

About TPSCo is a company, 51% owned by Tower Semiconductor Ltd. (NASDAQ: TSEM, TASE: TSEM) and 49% owned by Panasonic Semiconductor Solutions. TPSCo has three manufacturing facilities in Hokuriku, Japan which have been producing large scale integrated circuits for over 35 years. More than 750 million ICs for automotive products (Grade 0, 1 & 2) have been produced by TPSCo fabs since inception. Areas of process technology focus include high dynamic range image sensors (CIS and CCD), integrated power devices (BCD, SOI, and LDMOS) and high-frequency silicon RFCMOS. With over 150 qualified silicon process flows on 200mm and 300mm wafers from super micron to 45nm as well as internal back end processing, assembly and test services, TPSCo provides both IDMs and fabless companies with unparalleled semiconductor manufacturing quality and technology, including in-house turnkey services.

 

Investment Announced By Seagate Technology

Seagate Technology (NASDAQ: STX) today announced a package of investments totaling approximately £57.4 million centered on its wafer manufacturing plant at Springtown in Londonderry.

Seagate’s investment of £47.4 million is being supported by Invest Northern Ireland with an offer of £9.95 million. The funding will be focused on enabling further research and development in nanophotonics, cementing Springtown’s position as a leader in world class technology innovation, and creating 25 highly skilled new jobs.

Dave Mosley, Chief Executive Officer of Seagate Technology, Noel Lavery, Permanent Secretary at the Department for the Economy and Jeremy Fitch, Executive Director at Invest Northern Ireland, celebrated the announcement at the Seagate Springtown site with employees, local community and business representatives, including Queen’s University Belfast.

According to a recent IDC study sponsored by Seagate, global data creation will grow from 33 zettabytes in 2018 to 175 zettabytes by 2025, with big data analytics, smart cities and machine learning technologies driving the need to deliver greater data storage capacity.

“Technology innovation is the cornerstone of our success and the industry-leading innovation delivered by our facility in Springtown has been at the heart of our business strategy for the last 25 years,” said Dave Mosley, Chief Executive Officer of Seagate Technology. “Today’s investment extends a successful, collaborative partnership with Invest Northern Ireland and will further strengthen our ability to deliver customer-centric technology leadership for the data-driven future of the global economy.”

Jeremy Fitch, Executive Director of Business Solutions, Invest NI said: “Seagate first came to Northern Ireland in 1994, investing £50 million and creating 500 new jobs. Fast forward 25 years and the facility now employs 1,400 people and it is estimated that the company has invested in excess of £1 billion in capital here.

“Supporting the company along the way has been Invest NI, with every £1 of our support contributing to £4 investment in the local economy. We are delighted to be able to offer support towards this latest project which will see 120 highly skilled researchers here at Springtown, including 25 new recruits, play a major role in the development of ground-breaking new technology.”

Noel Lavery, Permanent Secretary at the Department for the Economy, welcomed the investment. He said, “Effective collaboration between Invest NI and Seagate has once again boosted the North West and the wider Northern Ireland economy by delivering investment and well-paid jobs in a sector with a strong future.”

Invest NI’s support is part funded by ERDF under the EU Investment for Growth and Jobs Programme 2014-2020.

Seagate’s Springtown facility is recognized as one of the foremost 200mm wafer fabrication plants in the world. The site has grown from an initial charter of world class manufacturing in the first decade of operations to adding development and product launch capabilities in the last ten years. The investment announcement is made as Seagate Springtown celebrates 25 years in business. The facility employs over 1,400 staff and continues to develop leading community and academic partnerships.

 

Cree to Expand Silicon Carbide Capacity

Advanced manufacturing campus will accelerate industry transition from silicon to silicon carbide to meet EV and 5G market demand. Expansion to generate up to a 30-fold increase in SiC wafer fabrication capacity and 30-fold increase in SiC materials production to meet the expected market growth by 2024Five-year investment leverages an existing building (“North Fab”) and refurbished 200mm equipment to build state-of-the-art automotive-qualified production facility. Investment: $450M for North Fab; $450M for materials mega factory; and $100M in other investments associated with growing the business

As part of its long-term growth strategy, Cree, Inc. CREE, -0.20% announces it will invest up to $1 billion in the expansion of its silicon carbide capacity with the development of a state-of-the-art, automated 200mm silicon carbide fabrication facility and a materials mega factory at its U.S. campus headquarters in Durham, N.C. It marks the company’s largest investment to date in fueling its Wolfspeed silicon carbide and GaN on silicon carbide business. Upon completion in 2024, the facilities will substantially increase the company’s silicon carbide materials capability and wafer fabrication capacity, allowing wide bandgap semiconductor solutions that enable the dramatic technology shifts underway within the automotive, communications infrastructure and industrial markets.

 “We continue to see great interest from the automotive and communications infrastructure sectors to leverage the benefits of silicon carbide to drive innovation. However, the demand for silicon carbide has long surpassed the available supply. Today, we are announcing our largest-ever investment in production to dramatically increase this supply and help customers deliver transformative products and services to the marketplace,” said Gregg Lowe, CEO of Cree. “This investment in equipment, infrastructure and our workforce are capable of increasing our silicon carbide wafer fabrication capacity up to 30-fold and our materials production by up to 30-fold compared to Q1 of fiscal year 2017, which is when we began the first phase of capacity expansion. We believe this will allow us to meet the expected growth in Wolfspeed silicon carbide material and device demand over the next five years and beyond.”

The plan delivers additional capacity for its industry-leading Wolfspeed silicon carbide business with the build out of an existing structure as a 253,000 square-foot, 200mm power and RF wafer fabrication facility as an initial step to serve the projected market demand. The new North Fab is designed to be fully automotive qualified and will provide nearly 18 times more surface area for manufacturing than exists today, initially opening with the production of 150mm wafers. The company will convert its existing Durham fabrication and materials facility into a materials mega factory.

“These silicon carbide manufacturing mega-hubs will accelerate the innovation of today’s fastest growing markets by producing solutions that help extend the range and reduce the charge times for electric vehicles, as well as support the rollout of 5G networks around the world,” said Lowe. “We believe that this represents the largest capital investment in the history of silicon carbide and GaN technologies and production with a fiscally responsible approach. By using existing facilities and installing a majority of refurbished tools, we believe we will be able to deliver a state-of-the-art 200mm capable fab at approximately one-third of the cost of a new fab.”

The expanded campus also creates high-tech job opportunities and will serve as an advanced manufacturing workforce development initiative. Cree plans to partner with state and local community and four-year colleges to develop training programs to prepare its workforce for the long-term, high-quality employment and growth opportunities the new facilities will present.

Also, as part of its long-term growth strategy, Cree, Inc. announced it will invest up to $1 billion in the expansion of its silicon carbide capacity with the development of a state-of-the-art, automated 200mm silicon carbide fabrication facility and a materials mega factory at its U.S. campus headquarters in Durham, N.C. It marks the company’s largest investment to date in fueling its Wolfspeed silicon carbide and GaN on silicon carbide business. Upon completion in 2024, the facilities will substantially increase the company’s silicon carbide materials capability and wafer fabrication capacity, allowing wide bandgap semiconductor solutions that enable the dramatic technology shifts underway within the automotive, communications infrastructure and industrial markets.

About Cree, Inc. :

Cree is an innovator of Wolfspeed [®] power and radio frequency (RF) semiconductors, lighting class LEDs and lighting products. Cree’s Wolfspeed product families include silicon carbide materials, power-switching devices and RF devices targeted for applications such as electric vehicles, fast charging, inverters, power supplies, telecom and military and aerospace. Cree’s LED product families include blue and green LED chips, high-brightness LEDs and lighting-class power LEDs targeted for indoor and outdoor lighting, video displays, transportation and specialty lighting applications. Cree’s LED lighting systems and lamps serve indoor and outdoor applications.

 

Hi-Tech New York Facility Gets New Resident

NexGen Power Systems has pledged $40 million to bring the facility to the required state, updating cleanroom space by making it cleaner and reworking its cold-water system

A hi-tech factory in DeWitt, NY, has spent many years in limbo, but now new residents are finally all moved in and raring to go. With only minimal adjustments to the cleanroom facilities, the building looks set to begin production soon.

According to Syracuse.com, the US$90 million facility was built by the taxpayers through SUNY Polytechnic Institute’s Fort Schuyler Management Corp, with the plan already in place to hire it out to startup LED-producer, Soraa.

This all fell through when Soraa pulled out halfway through construction in 2017. Adding fuel to the fire was the SUNY Polytechnic Institute’s corruption scandal, which caused the building to change hands, falling to Empire State Development.

Thankfully, in December 2017, the building was officially leased by California-based startup, NexGen Power Systems. The company CEO, Dinesh Ramanathan, said that the building was well suited to its needs as it was designed with the production of gallium nitride in mind. NexGen aims to use the same material but in the production of semiconductors, therefore required little adjustment to make it work for its needs.

In January 2018, NexGen pledged to spend $40m on the facility.

"There are some minor improvements that need to be made, but otherwise it's almost perfect," Ramanathan enthused.

These minor improvements consisted of making its 40 foot-high cleanroom space cleaner and reworking the cold-water system to eliminate the possibility of iron corroding the sensitive equipment.

The building owners have given its new tenants a grant of up to $15m for tools and equipment, $7.5m of which has been used so far. Officials have said that the grant is contingent on NexGen achieving the hiring commitments it has made of 577 jobs in 10 years. The semiconductor producers have also raised $25m in funds from Swiss-based Acal.

As of right now, NexGen has moved in manufacturing equipment at the 82,200 sq. ft. facility and is in the process of hiring. According to company tax records, the jobs will pay from $51,000 for fabrication technicians to $155,000 for research and development personnel.

Ramanathan said it will take about a year to ramp up to full production, providing transistor samples by early 2020, and full production by Q3 2020.

The CEO has been a part of the industry before, leading the failed power converted company, Avology. The bad experience does not seem to have discouraged him though, saying that NexGen has a better business plan in place.

 

McIlvaine Company

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