SEMICONDUCTOR INDUSTRY

UPDATE

 

August 2017

 

McIlvaine Company

 

TABLE OF CONTENTS

TowerJazz and Tacoma Announce a Partnership for a new 8-inch Fabrication Facility in Nanjing, China

NXP Announces Production of Security Chips in Its US Manufacturing Facilities

Micron Advances Semiconductor R&D Capability with New Facility

Disco to Expand Production

LandMark Opto Plans New Plant to Meet Datacentre Demand

Toshiba Invests in Fab 6

DHL Revamps Logistics Offering For Semiconductor Industry

European Project Matures 3 Si Photonic Platforms

Latest Fab Plans in China

  

 

 

TowerJazz and Tacoma Announce a Partnership for a new 8-inch Fabrication Facility in Nanjing, China

TowerJazz, the global specialty foundry leader, and Tacoma Technology Ltd and Tacoma (Nanjing) Semiconductor Technology Co., Ltd (collectively known as "Tacoma") announced that Tower has received a first payment of $18 million net, rendering phase one of the framework agreement with Tacoma binding. This agreement maps the establishment of a new 8-inch semiconductor fabrication facility in Nanjing, China. According to the terms of the framework agreement, TowerJazz will provide technological expertise together with operational and integration consultation, for which the company shall receive additional payments based on milestones during the next few years, subject to a definitive agreement specifying all terms and conditions.

In addition, from the start of production at the facility, TowerJazz will be entitled to capacity allocation of up to 50% of the targeted 40,000 wafer per month fab capacity, which it may decide to use at its discretion. This capacity will provide TowerJazz with additional manufacturing capability and flexibility to address its growing global demand.

Tacoma will be responsible to source funds for all activities, milestones and deliverables of the entire project, including the construction, commissioning and ramp of this facility, with the project being fully supported by Nanjing Economic and Technology Development Zone through its Administration Committee, Credito Capital as well as through potential funding from other third party investors and entities.

"This agreement with Tacoma is in line with our business strategy to focus on growing markets such as China. The fabless business in China has grown rapidly in the past years. The new 8-inch fabrication facility in Nanjing will provide us with a strategic footprint in China and the opportunity to extend our offerings in advanced specialty process technologies by enabling customers in China to optimize their product performance and time to market," said Dr. Itzhak Edrei, TowerJazz President.

Russell Ellwanger, TowerJazz Chief Executive Officer, commented, "We are exploring multiple opportunities in China, and determined this agreement with Tacoma to be a good fit for TowerJazz, providing a roadmap for a meaningful long-term strategic partnership. China's focus to develop its domestic semiconductor industry with full infrastructure presents additional opportunities for TowerJazz, as a global analog leader, to expand our served markets and geographic presence. This partnership will enable us to further fulfill our customers' needs through additional available capacity as well as to be an active player in the growing Chinese market."

Joseph Lee, Tacoma Chairman, stated: "Deeply engraved in the corporate culture of both Tacoma and TowerJazz is the core belief in working 'SMART' with 'PASSION.' Our people are committed to contributing to our business partners, the global semiconductor industry and society with the best endeavor and integrity. Tacoma will fully fund this project together with Credito Capital and other entities. This venture will become a dominant player in Asia and will raise the standard in the semiconductor industry to another level."

A groundbreaking and signing ceremony took place in Nanjing, China, attended by TowerJazz Chairman Mr. Amir Elstein, President Dr. Itzhak Edrei, Business Development Vice President Mr. Erez Imberman, as well as the then Israeli Ambassador to China the Honorable Mr. Matan Vilnai. Pictured, the signing between Tacoma Chairman, Mr. Joseph Lee and TowerJazz CEO Mr. Russell Ellwanger, with among others the above cited attendees.

About TowerJazz

Tower Semiconductor Ltd. (NASDAQ: TSEM, TASE: TSEM) and its subsidiaries operate collectively under the brand name TowerJazz, the global specialty foundry leader. TowerJazz manufactures next-generation integrated circuits (ICs) in growing markets such as consumer, industrial, automotive, medical and aerospace and defense. TowerJazz's advanced technology is comprised of a broad range of customizable process platforms such as: SiGe, BiCMOS, mixed-signal/CMOS, RF CMOS, CMOS image sensor, integrated power management (BCD and 700V), and MEMS. TowerJazz also provides world-class design enablement for a quick and accurate design cycle as well as Transfer Optimization and development Process Services (TOPS) to IDMs and fabless companies that need to expand capacity. To provide multi-fab sourcing and extended capacity for its customers, TowerJazz operates two manufacturing facilities in Israel (150mm and 200mm), two in the U.S. (200mm) and three facilities in Japan (two 200mm and one 300mm). For more information, please visit www.towerjazz.com.

About Tacoma / Tacoma (Nanjing) Semiconductor Technology Co., Ltd

Tacoma (Nanjing) Semiconductor Technology Co., Ltd (TTSEMI), a Provincial Key Project of Jiangsu Province (2017) and Nanjing City Key Project (2017) provides analog integrated circuit design and foundry technology integration services with a world class team of engineers.

Tacoma Technology Ltd

Tacoma Technology Ltd, an investment holding company established in Hong Kong, entered into a collaboration agreement with Nanjing Development Zone in 2015 and formed Tacoma (Nanjing) Semiconductor Technology Co., Ltd.

Tacoma (Nanjing) Semiconductor Technology Co., Ltd and Tacoma Technology Ltd are the only two parties partnering with TowerJazz in the collaboration mentioned in this announcement.  Any other company of which the name includes "Tacoma" or formerly includes "Tacoma" is not related to this collaboration as described in this announcement.

About Credito Capital

Founded by Mr. Wong Ping Kuen in Beijing, China, Credito Capital has built an international investment team of diversified and experienced professionals from Mainland China, Hong Kong, Korea and the United Kingdom. Credito Capital is specialized in cross border merger acquisitions and industry investments, including but not limited to logistics, semiconductor and new energy vehicle industries.

About Nanjing Development Zone

Nanjing Development Zone was established in 1992, and it was approved by the State Council to be the National Economic and Technological Development Zone in 2002. It has over 216 square kilometers of land reserve for development, and its comprehensive ranking is among top 10 state-level economic and technological development zones. It is an important industry base for China advanced manufacturing and modern service. Up to now, a total of more than 3,000 companies, with a total investment of CNY 200 billion (of which 500 are foreign-funded enterprises, with a total investment of $ 12 billion) have been introduced to establish its business in this development zone. There are 73 world's top 500 enterprises in this development zone. In the future, Nanjing Development Zone will continue to focus on the development of a comprehensive industrial chain of integrated circuit in the development zone.

 

NXP Announces Production of Security Chips in Its US Manufacturing Facilities

NXP Semiconductors N.V. announced a $22 million dollar program that expands its operations in the United States, enabling the company’s US facilities to manufacture security chips for government applications that can support critical US national and homeland security programs. Upon completion of the expansion project, NXP facilities in Austin and Chandler will be certified to manufacture finished products that exceed the highest domestic and international security and quality standards.

“This initiative advances NXP’s long-term commitment to developing secure ID solutions for federal, state and local government programs in the United States and demonstrates our deep dedication to serving the American market,” said Ruediger Stroh, Executive Vice President of Security and Connectivity at NXP. “The expansion program further positions NXP to deliver solutions for the IoT, connected devices and many other fast-growing applications in the United States as we continue to be a major contributor to the country’s global leadership in the semiconductor industry.”

As the market leader in secure identification solutions, NXP’s proven technology is included in core components that power secure government-issued ID documents in more than 120 countries, and is used by 95 countries worldwide to secure electronic passport programs.

Steve Adler, the Mayor of Austin, said, “We are excited to see NXP investing in Austin and in the cyber security of our country. We trust this initiative will also secure thousands of jobs and further foster the growth of Austin as a major technology hub.”

NXP R&D manufacturing facilities in San Jose, Austin and Chandler have also undergone a thorough security cite certification process to produce Common Criteria EAL6+ SmartMX microcontroller family products. Common Criteria is an international set of guidelines and specifications developed for evaluating information security products to ensure they meet a rigorous security standard for government deployments.

 

Micron Advances Semiconductor R&D Capability with New Facility

Micron Technology Inc. (Micron) has hosted an event at its headquarters to mark the opening of a new facility which will play a critical role in the company's research into breakthrough new memory and storage technologies of the future.

When fully equipped, the new building will nearly double Micron's cleanroom space dedicated to research and development in Boise, and will support a significant expansion of the company's overall R&D capabilities.

This expanded facility in Boise is the focal point for developing new semiconductor manufacturing processes and designs for the company's future memory and storage technologies. Once developed in the Boise R&D center, these processes are then transitioned into production-scale manufacturing in Micron's network of 12 large scale manufacturing plants (fabs) around the world.

Commemorating this milestone, Micron President and CEO, Sanjay Mehrotra, and Technology Development Executive Vice President, Scott DeBoer, guided public representatives and dignitaries through the new facility.

"Creating the world's most advanced semiconductors is a highly complex process," said Mehrotra. "The work done by our industry-leading team of scientists and engineers here in Idaho will help shape tomorrow's technologies, products and solutions including future generations of phones, vehicles, and data centers, and advance rapidly emerging trends such as artificial intelligence and big data analytics. Today's accomplishment of our R&D cleanroom space marks a significant acceleration of our innovation capabilities in Boise."

Construction of the new cleanroom facility began in October 2015 to create an expanded pristine, precision-controlled environment for development and fabrication of advanced memory integrated circuits leveraging Micron's years of deep technical expertise and innovation capability. The foundation of the building required 24,000 cubic yards of concrete, the equivalent of a concrete truck delivery every hour for 100 days straight. Ten million pounds of steel were used to house this advanced research center, and the structure contains 240 miles of wire in the building alone, enough to reach the International Space Station.

The Boise R&D fab lies at the heart of Micron's global network of innovation, and its expansion will help accelerate the development of future generations of DRAM, NAND and emerging memory technologies.

DeBoer highlighted that Micron's leading-edge DRAM technology (1Ynm) has now transitioned from Boise R&D and into Micron's production fab in Hiroshima, Japan. Over the past year, the R&D team has also successfully completed the development process in Boise for 64-layer 3D NAND, and moved the technology from initial development in Boise all the way through to volume production in Micron's Singapore fabs.

In its role as the company's global technology development center, Boise R&D is leading the development of the next-generation of technologies such as future DRAM, 3D XPoint™ and 3D NAND.

 

Disco to Expand Production

Tokyo-based Disco Corporation, a semiconductor processing equipment manufacturer, has decided to establish a new office, Nagano Works Chino Plant (Toyohira, Chino-city, Nagano), aimed at enhancing the company’s production capacity. It will hire an additional 550 new employees. The building is currently used by Daiichi Components, a subsidiary of Disco.

According to the company, the range of semiconductor applications, including those in the IoT, automotive, and medical fields, are continuously expanding, and the need for semiconductor manufacturing equipment is expected to increase in the future.

Expansion work is currently being done on the manufacturing building at Hiroshima Works Kuwabata Plant (Kure-city, Hiroshima). However, this expansion is primarily for meeting customer needs for precision processing tools, and the manufacturing space for semiconductor equipment will be limited in the future.

Furthermore, Disco’s manufacturing is focused in two plants, the Kuwabata Plant and the Kure Plant, located in Kure-city, Hiroshima. Even though countermeasures such as seismically isolated structures have been implemented, it is necessary to diversify risks for the purpose of BCM2.

The Nagano Works Chino Plant will be manufacturing manual dicing saws, increasing the production capacity by 1.5 times. It will also be producing critical and peripheral parts and equipment manufactured by Daiichi Components. Expected opening date: April 1, 2018.

 

LandMark Opto Plans New Plant to Meet Datacentre Demand

The Taiwanese epi-wafer firm LandMark Optoelectronics plans to set up a new plant to meet projected demand for silicon photonic products. The company, a maker of GaAs- and InP-based epitaxial wafers, reported Q2 consolidated revenues of $15.89 million, up 27.31 percent quarter on quarter. It expects double-digit sequential sales growth in Q3 and Q4, aided by the rapid development of datacentres.

Datacentres commanded the largest share of Q2 revenue at 55 percent followed by 35 percent from the communications sector, and 10 percent from consumer and industrial sectors. Silicon photonic products accounted for 40 percent of revenues, followed by 32 percent for 10G PON (passive optical network) epitaxial wafer products, 10 to 15 percent for photo detectors and other products, and 7 to 8 percent for 2.5G Pon epi-wafer products.

To meet demand the company ordered two large-sized MOCVD machines in May, which will be installed in early October to boost output to fill increased orders. This will bring the total number of MOCVD machines to 21 units.

After starting mass production of 10G PON epi-wafer products in the second quarter, the company has witnessed a steady increase in customers, which will inject new growth momentum to its overall sales.

The company delivered samples of 25G PON epi-wafer for customer certification in May, and is likely to start shipments of the new product in the fourth quarter of 2017. As the price for 25G epi-wafer is 3-4 times that of 10G counterparts, shipments of the new product will significantly boost the company's gross margins, company officials said.

Furthermore, the company also sent first samples of epi-wafers for autonomous driving devices to a customer for certification in July, and is likely to start shipping the new wafer product in early 2018 if everything goes smoothly.

 

Toshiba Invests in Fab 6

Due to ever-increasing demands for flash memory, companies have moved away from the traditional, planar approach to designing, instead choosing to go the 3D route. One of the world's biggest such manufacturers, Toshiba, has announced that it would solely invest in its Fab 6 state-of-the-art manufacturing facility.

For those not aware, back in February, Toshiba announced that it had started construction on the newly acquired 1,614,586 sq. ft. (150,000m²) lot adjacent to its Yokkaichi Operations memory production center in Japan's Mie prefecture. This site is where the company wants to build its Fab 6 manufacturing plant - which will be dedicated only to producing its proprietary BiCS 3D Flash memory - as well as a Memory R&D Center.

Construction will take place in two phases, much like the firm's Fab 5 plant, with Phase-1 slated to be finished by summer 2018. In order to meet this target date, Toshiba Corporation has announced that it would invest approximately 180 billion yen (around $1,6B USD) in Toshiba Memory Corporation (TMC), a wholly-owned subsidiary.

TMC was initially in talks with Western Digital-owned SanDisk for a possible joint investment, but apparently the negotiations failed, and as such, the company just announced that will now solely invest in Fab 6. This development has forced the manufacturer to also add another 15B yen to its initial planned investment for FY2017, bringing the total sum to 195B yen (about $1.76B USD). Regarding the usage of the funds, the company states:

TMC will invest approximately 195 billion yen in Fab 6 in FY2017, covering the installation of manufacturing equipment for 96-layer BiCS FLASH™ memory in the Phase-1 cleanroom, and the construction of Phase-2. TMC calculates that proceeding unilaterally with the installation of manufacturing equipment in Fab 6 will require it to increase its funding by 15 billion yen against its initial estimate. Installation is expected to begin as early as December, 2017.

In closing, Toshiba Memory Corporation states that the output of 3D NAND at Yokkaichi is intended to increase to "approximately 90% of its capacity in FY2018".

 

DHL Revamps Logistics Offering For Semiconductor Industry

Logistics giant DHL has unveiled a suite of semiconductor logistics solutions to its customers in a cost effective way.

The company is combining its competencies to the computer industry as DHL Semiconductor Logistics to provide a full suite of end-to-end solutions.

It is also launching a global capital support center with teams in Europe, Asia Pacific and the US.

The services include the complete value chain from inbound to manufacturing facilities through to final distribution to end users.

The new range of solutions offer visibility of products, compatibility with international regulations and maximum security for sensitive and high value goods.

DHL technology sector president Rob Siegers said: "With more than 3,000 dedicated employees and 50 facilities worldwide, we have built extensive infrastructure and expertise for the semiconductor industry.

“With our new offer, we connect DHL's broad capabilities, enabling us to individually service our customers along their complete supply chain in a cost-efficient way. This becomes crucial for an industry that requires special logistics to be a competitive differentiator.”

Based on an analysis, the revenue of the semiconductor market will increase by 16.8% in 2017 from $400bn in 2016.

The new logistics services of DHL will enhance the flexibility and agility of semiconductor supply chains.

DHL Customer Solutions & Innovation semiconductor business development Doug Whaley said: "In light of the challenges the industry is facing when it comes to supply chain management, the new center allows us to provide our customers with a truly holistic view of their supply chain and effectively manage their logistic needs.

"Together with the data on our customers' logistics movements, we can identify potential issues early and consistently optimize logistics costs."

 

European Project Matures 3 Si Photonic Platforms

Launched in 2012, the PLAT4M project seeks to seamlessly transition to pilot line operation and industrial manufacturing of products based on silicon photonics.

Hailed as one of the most promising industrial-production candidates, silicon photonics has long been expected to bring breakthroughs in very high speed data communications, telecommunications and supercomputing.

In 2012, the European Commission launched a 15-member PLAT4M project to build a Si photonics supply chain in Europe. The goal was to advance existing silicon photonics research foundries and seamlessly transition to pilot line operation and industrial manufacturing of products based on silicon photonics.

The supply chain is based on three different but complementary technology platforms of Leti, STMicroelectronics and imec, according to Leti.

Leti's 91,493 sq. ft. (8,500m2) cleanroom facility includes a 200mm pilot line that enables fabrication of passives, detectors, modulators and integrated lasers with a focus on high-bandwidth devices. The project team developed a new Si-photonic platform based on a 310nm silicon film on top of an 800nm buried oxide (BOX) on a high-resistivity silicon substrate. Since the targeted applications for the project were O-band transceivers and receivers, most of the developed devices are suitable for 1310nm operations.

CEA-LETI has developed 3 PDKs which are dedicated to Multi Project Wafers (MPW) runs on this silicon photonics technology which is now offered via the brokers CMP and Europractice. Moreover, III-V Lab has designed and co-fabricated a state-of-the-art integrated hybrid III-V/Si transmitter using a wafer bonding technique on this platform.

Meanwhile, STMicroelectronics—the first 300mm wafer silicon photonics device manufacturer—developed another silicon photonics technology during the PLAT4M project to generate and nurture further application specific industrial nodes.

The technology platform creates an advanced photonic nanoscale environment and combines state-of-the-art CMOS foundry tools with the flexibility necessary to support R&D efforts. Collaboration with research partners such as CEA LETI and University Paris Sud have been devoted to advanced studies in power consumption management, optical excess loss reduction and higher data-rate transmissions using complex modulation formats, signal multiplexing and higher Baud-rate devices.

ST has also evaluated notions of device and circuit footprints toward Large System Integration (LSI).

In the context of PLAT4M, the participants chose a 4×25G transceiver as a Wavelength Division Multiplexing (WDM) data communication demonstrator to validate both LETI and ST R&D platforms. The device functionalities were evaluated for compatibility with the 100GBase-LR4 standard, implying a signal transmission over 4 channels, spaced by 800GHz around 1310nm window, one fiber out and one fiber in.

In the course of the PLAT4M project, imec has consolidated and further developed its silicon photonics technology platform ISIPP25G using its 200mm pilot line facilities located in Leuven to support industrial prototyping for various applications and markets.

The imec platform component portfolio has been expanded to specific devices for sensing and high power free space applications. The technology also supports state-of-the-art modulation and detection at 50Gb/s and beyond with a variety of modulator options (GeSi EAM, Si MZM, Si MRM) now offered under its ISIPP50G technology along with both edge and surface fiber coupling technology and a library of O-Band and C-Band high quality passive components.

The technology is accessible through imec's PDK, which is supported by software tools from several vendors including project partner PhoeniX Software. In collaboration with Mentor, a Siemens business, imec has also explored LVS verifications to reduce design errors and performed litho-friendly design analysis to improve the patterning predictability.

Using the imec technology with new processing steps, TNO has demonstrated a multi-channel ring resonator based sensor system. Polytec demonstrated the operation of Multichannel Laser Doppler Vibrometer. THALES has demonstrated an integrated FMCW LiDAR system with eight switchable output channels, enabling to scanning directions as well as a coherent beam combiner with 16 beams with linear operation up to a maximum input power of 26dBm. The thermal phase-shifter elements achieved a power efficiency of 10mW.

Imec also demonstrated new advances in its technology such as a very low loss silicon waveguide technology (~0.6dB/cm for a 220nm x 450nm waveguide) applying leading edge CMOS patterning technology developed in its 300mm pilot line with immersion lithography. It has also demonstrated a further reduction of thermal phase-shifter elements down to 4mW for a π-phase shift.

The PLAT4M project has led to a qualitative leap of the design flow for silicon photonics, allowing the photonics community to design more complex and more robust circuits. Mentor and PhoeniX Software have worked closely together on an integrated electronics/photonics co-design workflow.

The supply chain includes EDA solutions such as Mentor's Pyxis and Calibre, which were extended to "understand" photonics. Interfaces were developed between these tools and Photonic IC design solution OptoDesigner from PhoeniX Software to create integrated design flows using the best practices from both photonics and electronics design. In addition, process design kit elements were developed for Mentor's Calibre DRC, Calibre LVS and Pyxis tools, incorporating new components, added models and fabrication information.

Packaging played a key role in the development of the project demonstrators. The skills and processes developed by Aifotec and Tyndall, advanced the development of the Silicon Photonic packaging toolkit. This toolkit establishes standardized packaging processes for optical fibers, active devices, electronic components and thermo-mechanical systems to ensure that PICs can be more easily packaged in a timely and cost-effective way. A design rule document was made available through EuroPractice by Tyndall and also implemented into PDKs for OptoDesigner.

"The consortium developed advanced technologies and tools by building a coherent design flow, demonstrating manufacturability of elementary devices and process integration, and developing a packaging toolkit," said Jean-Marc Fedeli, coordinator of the PLAT4M project. "The high level of maturity of the technology offered by these platforms makes them readily accessible to a broad circle of users in a fabless model."

 

Latest Fab Plans in China

The latest research on semiconductor fab plans in China after 2016 finds that a total 17 new fabs are slated for construction so far. Five of these plants will be for processing 8-inch wafers and the remaining 12 plants will be for processing 12-inch wafers. New fab projects will carry high depreciation costs, and the aggressive recruitment efforts by semiconductor manufacturers will raise the cost of personnel needed for fab operation. Furthermore, prices of bulk silicon wafers have gone up as the strong demand for them worldwide has outpaced the overall supply. Within the short/medium term, the construction and operation of these new fabs poses enormous financial risks for their owners.

The operational cost structure of a newly built wafer fab can be divided into upstream materials, direct operating personnel (i.e. technicians working at the fabrication line), indirect personnel (i.e. R&D engineers) and depreciation. If a newly formed semiconductor company has a 28nm fab with an initial production capacity of 10,000 wafer starts per month, the depreciation cost would account for 49% of manufacturer’s annual revenue (as seen in the figure above). By contrast, the existing first- and second-tier foundries would have depreciation cost account for around 23.6% and 25% of their total annual revenues, respectively. Under this analysis model, the fab depreciation cost of a new manufacturer could be nearly double that of the existing foundries.

Besides, new semiconductor companies would have to offer highly attractive salaries that are twice or three times as much as the industry’s average to get key positions filled in their newly built facilities. The rising labor cost include people who are directly participating in the fabrication and indirect personnel. The indirect personnel are engineering talents employed to reduce the learning curve for production ramp-up and strengthen relationships with clients. Estimates of the cost of the indirect personnel for a new semiconductor manufacturer (one that is under the conditions mentioned in the above analysis model) could make up as much as 34% of its annual revenue. For the existing first- and second-tier foundries, the shares of this particular cost in their annual revenues are on average 10.2% and 17.5%, respectively.

In terms of upstream materials, the bulk silicon wafers could make up around 30% of the total material cost for a foundry company. Due to demand exceeding supply this year, some recently formed Chinese semiconductor manufacturers are reported to have offered prices that are as much as 20% higher than prices offered by the first- and second-tier foundries. Besides rising prices of bulk silicon wafers, optimizing a newly set up fabrication process with freshly recruited technicians and engineers will also involve additional wafer losses, thus driving up the material cost during the initial operation period.

Also, the costs of upstream materials also correlate to a company’s ability to negotiate with the suppliers. Therefore, new entrants in the industry will incur higher material and direct personnel costs compared with the first- and second-tier foundries.

In addition to being in a disadvantageous position cost-wise, a new entrant in the foundry market will be competing against established players that are much larger in scale and more advanced in technology. First-tier foundries, for instance, can often leverage their technological leads to have short-term dominance over certain IC markets. While later entrants may have the same processing nodes as established players, they lag behind in yield rates and this constrain their ability to negotiate with customers. They may even have to lower their prices to get orders, thus limiting their cost recovery options. In short, new semiconductor manufacturers that are now building or planning to build fabs are at risks of incurring huge financial losses in the short/medium term.

China’s National IC Industry Investment Fund was established in 2014 to help domestic semiconductor companies in their formational period, during which they would have funding problems. The national fund and related policies encourage local governments to invest in the industry and develop tax incentives and other subsidies. Under this policy framework, domestic companies will be able to lower their operational costs and risks in the early phase of their development. With the government support, they will have a chance to grow into major entities within the country’s semiconductor chain in the long run.

McIlvaine Company

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