Cleanroom Projects and People (Sample)

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Project Title: Semiconductor Manufacturing International Corporation (SMIC)

Revision Date:

Entry Date: 1/1/2003

          Startup Date:

          Expansion Date: 2004

          Country: China

          City: Beijing / Beijing Economic Technical Development Area

          Size: 1,935,272 sq. ft. facility with 193,658 sq. ft. cleanroom areas

          Product: 8-inch and 12-inch wafers



          SIC Description: Semiconductor

          Ground has been broken and SMIC will move its separate 200-mm fab and 300-mm pilot plant into production as early as late-2003. The 300-mm fab will be a pilot fab which would be capable of processing 0.13-micron devices. SMIC's 200-mm (8-inch) plant in Beijing is a 0.25 to 0.18-micron fab, capable of making 30,000 wafers per month. Production is expected for the "Fab 4" 200-mm plant to begin in late-2003 or early-2004. **Infineon will transfer its 0.11 micron DRAM technology and 300mm production know-how to SMIC. SMIC will manufacture products using this technology exclusively for Infineon. This will enable Infineon to increase overall capacity by approximately 15,000 wafer starts per month through this SMIC 300mm plant currently being built. **As of December 2003, SMIC is planning to buy approximately $1 billion in tools for the new Fab 4 facility. Delivery will be in March 2004. SMIC is reportedly processing between 10,000 and 15,000 wafers per month for Toshiba under an SRAM contract. SMIC also operates two other facilities in Shanghai. **As of June 2004, SMIC has received its first 300-mm equipment for the new Fab 4 in Beijing. This is the first 300-mm fab built in China. The facility is still slated to begin production in the second half of 2004, with a planned capacity of 45,000 8-inch equivalent wafers a month by the end of 2005. However, the company has stated that it will expand its 300-mm production only when there are customer and market demands. The SMIC Beijing site also has space for a second 300-mm Fab 5 but there is no indication when equipment might be installed for that facility. SMIC currently has three 200-mm fabs in Shanghai, producing wafers with process technologies ranging from 0.13 to 0.35 micron. **As of October 2004, SMIC's Fab 4 has started pilot production of 300-mm wafers. Fab 4 is initially producing DRAM chips using 0.11 and 0.10-micron process technology. SMIC has two DRAM partners, Germany's Infineon Technologies AG and Elpida Memory of Japan. Fab 4 has 1,936,800 sq. ft. of floor space including 193,680 sq. ft. of cleanroom. Fab 4 may be the first fab in the world with a rain and sewage reclamation system. SMIC has also implemented a cooling system for the fab that reduces energy consumption. Half of Fab 4 capacity has been booked for long-term contracts, assuring stable utilization of the fab. Pilot production for more advanced processes beyond the initial 0.11 and 0.10-micron DRAM is underway. **As of January 2005, the Beijing fab will have a total floor space of 1,935,272 sq. ft. and 193,658 sq. ft. cleanroom production areas. SMIC plans to begin production at Fab 4 later this year, with wafer fabrication capacity of 45,000 8-inch wafer equivalents by the end of 2005. It plans to begin production at Fab 6C in late 2005 and at Fab 5 as early as 2006. Fab 4 is expected to have a total capacity of 6,750 8-inch wafer equivalents per month by the end of 2004 and 45,000 8-inch wafer equivalents per month by the end of 2005. It plans to commence commercial production at Fab 6C, which will include a copper interconnects line, in late 2005. The facility expected to start 90-nm logic wafer manufacturing before the end of 2005.

Contractors Contractor Comment
No contactor information available
Person Title Phone Fax Email
Sarina Huang Public Relations 86-21-5080-2000 86-21-5080-2868
Samuel Wang President of U.S. Operations      
Richard Chang CEO      



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